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MHV5IC1810Nr2 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifier the MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 mhz. this multi--stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats. final application ? typical two--tone performance: v dd =28volts,i dq1 = 120 ma, i dq2 = 90 ma, p out = 5 watts avg., full frequency band (1805--1880 mhz or 1930--1990 mhz) power gain ? 29 db power added efficiency ? 29% imd ? --34 dbc driver application ? typical gsm edge performance: v dd =28volts,i dq1 = 105 ma, i dq2 = 95 ma, p out = 35 dbm, full frequency band (1805--1880 mhz or 1930--1990 mhz) power gain ? 29 db spectral regrowth @ 400 khz offset = --67 dbc spectral regrowth @ 600 khz offset = --76 dbc evm ? 1.1% rms ? capable of handling 3:1 vswr, @ 28 vdc, 1990 mhz, 10 watts cw output power ? stable into a 3:1 vswr. all spurs below --60 dbc @ 100 mw to 10 w cw p out . features ? characterized with series equival ent large--signal impedance parameters and common source parameters ? on--chip matching (50 ohm input, >5 ohm output) ? integrated quiescent current temperature compensation with enable/disable function ? on--chip current mirror g m reference fet for self biasing application (1) ? integrated esd protection ? rohs compliant ? in tape and reel. r2 suffix = 1500 units, 16 mm tape width, 13 inch reel. 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 (top view) 9 nc v ds1 gnd v gs1 v gs2 nc v ds2 /rf out v ds2 /rf out v ds2 /rf out v ds2 /rf out v ds2 /rf out v ds2 /rf out nc v gs1 rf in v ds1 v gs2 rf in v ds2 /rf out 2 stage ic quiescent current temperature compensation v rd1 v rg1 v rd1 v rg1 note: exposed backside flag is source terminal for transistors. figure 1. functional block diagram figure 2. pin connections 1. refer to an1987, quiescent current control for the rf i ntegrated circuit device family. go to http://www.freescale.com/rf . select documentation/application notes -- an1987. document number: MHV5IC1810N rev. 1, 3/2011 freescale semiconductor technical data MHV5IC1810Nr2 1805--1990 mhz, 5 w avg., 28 v gsm/gsm edge rf ldmos wideband integrated power amplifier case 978--03 pfp--16 plastic 16 1 ? freescale semiconductor, inc., 2006, 2011. a ll rights reserved.
2 rf device data freescale semiconductor MHV5IC1810Nr2 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +12 vdc storage temperature range t stg --65 to +150 c operating junction temperature t j 150 c input power p in 12 dbm table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case final application stage 1, 28 vdc, i dq1 = 120 ma (p out = 10 w cw) stage 2, 28 vdc, i dq2 =90ma driver application stage 1, 28 vdc, i dq1 = 120 ma (p out = 2.25 w cw) stage 2, 28 vdc, i dq2 =90ma r jc 9.2 3.3 10 3.5 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 0 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale wideband 1930--1990 mhz test fixture, 50 ohm system) v dd =28vdc,i dq1 = 120 ma, i dq2 =90ma, p out = 5 w avg., f1 = 1990 mhz, f2 = 1990.1 mhz, two--tone test power gain g ps 26.5 29 ? db power added efficiency pae 25 29 ? % intermodulation distortion imd ? -- 3 4 -- 2 7 dbc input return loss irl ? -- 10 db typical two--tone performances (in freescale test fixture, 50 hm system) v dd =28vdc,i dq1 = 120 ma, i dq2 =90ma,p out = 5 w avg., 1805--1880 mhz power gain g ps ? 29 ? db power added efficiency pae ? 29 ? % intermodulation distortion imd ? -- 3 4 ? dbc input return loss irl ? -- 1 5 ? db typical gsm edge performances (in freescale gsm edge test fixture, 50 hm system) v dd =28vdc,i dq1 = 105 ma, i dq2 =95ma, p out = 3.2 w avg., 1805--1880 mhz or 1930--1990 mhz edge modulation power gain g ps ? 29 ? db error vector magnitude evm ? 1.1 ? %rms spectral regrowth at 400 khz offset sr1 ? -- 6 7 ? dbc spectral regrowth at 600 khz offset sr2 ? -- 7 6 ? dbc 1. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
MHV5IC1810Nr2 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) ( continued) characteristic symbol min typ max unit typical cw performances (in freescale cw test fixture, 50 hm system) v dd =28vdc,i dq1 = 120 ma, i dq2 =90ma,p out = 2.25 w avg., 1805--1990 mhz power gain g ps ? 29 ? db power added efficiency pae ? 19 ? % input return loss irl ? -- 1 3 ? db
4 rf device data freescale semiconductor MHV5IC1810Nr2 z7 0.273 x 0.044 microstrip z8 0.917 x 0.050 microstrip z9 0.304 x 0.050 microstrip z10 0.710 x 0.050 microstrip z11 1.296 x 0.400 microstrip pcb rogers 4350, 0.020 , r =3.50 z1 0.120 x 0.044 microstrip z2 0.257 x 0.044 microstrip z3 0.130 x 0.170 microstrip z4 0.067 x 0.122 microstrip z5 0.127 x 0.122 microstrip z6 0.355 x 0.084 microstrip figure 3. MHV5IC1810Nr2 test circuit schematic ? 1930--1990 mhz rf output rf input z11 z1 z2 c2 v gs2 r2 c8 v gs1 r1 c10 c7 c5 z9 c9 z3 z5 z6 z7 c6 c13 c12 nc nc v ds2 v ds1 v rg1 v rd1 nc quiescent current temperature compensation 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 c3 c4 c14 c15 z10 z8 c11 z4 table 6. MHV5IC1810Nr2 test circuit compone nt designations and values ? 1930--1990 mhz part description part number manufacturer c2 22 pf chip capacitor atc100a220gt500xt atc c3, c4, c5, c6 8.2 pf chip capacitors atc100a8r2ct500xt atc c7, c8, c9 10 nf chip capacitors 08055c103kat avx c10, c11 6.8 f chip capacitors c4532x5r1h685mt tdk c12, c13 3.3 pf chip capacitors atc100a3r3bt500xt atc c14, c15 0.5 pf chip capacitors atc100a0r5bt500xt atc r1, r2 1k ? , 1/8 w chip resistors crcw1k00fkea vishay
MHV5IC1810Nr2 5 rf device data freescale semiconductor figure 4. MHV5IC1810Nr2 test circui t component layout ? 1930--1990 mhz MHV5IC1810N rev. 0 c10 v d1 v d2 c11 c5 c9 c13 c12 c6 c14 c15 c2 c3 c7 c4 c8 v gs1 r1 v gs2 r2
6 rf device data freescale semiconductor MHV5IC1810Nr2 typical characteristics ? 1930--1990 mhz 2000 27 35 1900 -- 5 0 -- 1 0 irl g ps imd f, frequency (mhz) v dd =28vdc,p out =5w(avg.) i dq1 = 120 ma, i dq2 =90ma 100 khz tone spacing 34 --15 33 --20 32 --25 31 --30 30 --35 29 --40 28 --45 1920 1940 1960 figure 5. two--tone wideband performance @p out = 5 watts (avg.) pae pae , power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulatio n distortion (dbc) 1980 2000 0 35 1900 -- 7 0 0 irl g ps imd f, frequency (mhz) v dd =28vdc,p out =20dbm(avg.) i dq1 = 120 ma, i dq2 =90ma 100 khz tone spacing -- 1 0 30 -- 2 0 25 -- 3 0 20 15 -- 5 0 10 -- 6 0 1920 1940 1960 figure 6. two--tone wideband performance @p out =20dbm(avg.) pae pae , power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulatio n distortion (dbc) 1980 p out , output power (watts) pep 25 32 1 i dq1 = 120 ma i dq2 = 140 ma v dd =28vdc center frequency = 1960 mhz 100 khz tone spacing 30 28 27 10 100 figure 7. two--tone power gain versus output power g ps , power gain (db) 100 -- 8 0 -- 1 0 0.1 7th order v dd =28vdc i dq1 = 120 ma, i dq2 =90ma f = 1960 mhz, 100 khz tone spacing 5th order 3rd order 110 -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 6 0 -- 7 0 p out , output power (watts) pep figure 8. intermodulation distortion products versus output power imd, intermodulatio n distortion (dbc) 5 -- 4 0 31 29 26 i dq1 = 120 ma i dq2 =115ma i dq1 = 120 ma i dq2 =65ma i dq1 =60ma i dq2 =90ma i dq1 = 120 ma i dq2 =90ma i dq1 = 120 ma i dq2 =45ma
MHV5IC1810Nr2 7 rf device data freescale semiconductor typical characteristics ? 1930--1990 mhz 10 47 0 p3db = 42.5 dbm (17.78 w) p in , input power (dbm) v dd =28vdc i dq1 = 120 ma, i dq2 =90ma pulsed cw, 12 sec(on), 1% duty cycle f = 1960 mhz 35 24 8 6 actual ideal 45 41 43 39 -- 2 figure 9. pulse cw output power versus input power p out , output power (dbc) 37 p1db = 42 dbm (15.85 w) 100 24 36 0.1 0 60 v dd =28vdc,i dq1 = 120 ma i dq2 = 90 ma, f = 1960 mhz t c =--30 _ c 25 _ c 85 _ c -- 3 0 _ c 25 _ c 85 _ c 10 1 34 32 30 28 26 50 40 30 20 10 p out , output power (watts) cw figure 10. power gain and power added efficiency versus cw output power g ps , power gain (db) pae, power added efficiency (%) pae g ps p out , output power (watts) cw figure 11. power gain versus output power 16 v i dq1 = 120 ma i dq2 =90ma f = 1960 mhz v dd =12v 20 v 24 10 34 08 32 24 22 28 246 g ps , power gain (db) 2000 26 1800 t c =--30 _ c v dd =28vdc,p out =1wavg.,i dq1 = 120 ma, i dq2 =90ma two--tone measurements, center frequency = 1960 mhz 25 _ c 85 _ c 32 30 28 27 1850 1900 1950 f, frequency (mhz) figure 12. power gain versus frequency g ps , power gain (db) 30 26 18 16 20 14 12 14 10 12 20 16 18 22 24 v 28 v 32 v 33 31 29
8 rf device data freescale semiconductor MHV5IC1810Nr2 typical characteristics ? 1930--1990 mhz p out , output power (watts) avg. 100 4 10 v dd =28vdc i dq1 = 105 ma i dq2 =90ma f = 1960 mhz edge modulation 8 6 0 10 0.1 2 20 50 40 30 0 10 pae t c =85 _ c 25 _ c figure 13. evm and power added efficiency versus output power evm, error vector magnitude (% ms) pae, power added efficiency (%) 100 -- 8 5 -- 4 5 p out , output power (watts) avg. -- 5 5 -- 6 0 -- 6 5 -- 7 0 -- 7 5 -- 8 0 0.1 10 t c =85 _ c v dd =28vdc i dq1 = 105 ma i dq2 =90ma f = 1960 mhz edge modulation 25 _ c 85 _ c -- 3 0 _ c sr @ 400 khz sr @ 600 khz figure 14. spectral regrowth at 400 and 600 khz versus output power spectral regrowth @ 400 khz and 600 khz (dbc) 1 -- 3 0 _ c evm -- 5 0 1 -- 3 0 _ c 25 _ c 190 10 8 90 1st stage t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 2nd stage 100 110 120 130 140 150 160 170 180 10 5 10 4 10 6 10 7 figure 15. mttf factor versus junction temperature mttf factor (hours x amps 2 ) figure 16. edge spectrum -- 1 0 -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 6 0 -- 7 0 -- 8 0 -- 9 0 --100 200 khz span 2 mhz center 1.96 ghz -- 11 0 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms vbw = 30 khz gsm test signal
MHV5IC1810Nr2 9 rf device data freescale semiconductor z8 0.273 x 0.044 microstrip z9 0.917 x 0.050 microstrip z10 0.304 x 0.050 microstrip z11 0.710 x 0.050 microstrip z12 1.296 x 0.400 microstrip pcb rogers 4350, 0.020 , r =3.50 z1 0.120 x 0.044 microstrip z2 0.257 x 0.044 microstrip z3 0.130 x 0.170 microstrip z4 0.070 x 0.122 microstrip z5 0.125 x 0.122 microstrip z6 0.095 x 0.084 microstrip z7 0.260 x 0.085 microstrip figure 17. MHV5IC1810Nr2 test circuit schematic ? 1805--1880 mhz rf output rf input z12 z1 z2 c2 v gs2 r2 c8 v gs1 r1 c10 c7 c5 z10 c9 z3 z4 z7 z8 c6 c13 nc nc v ds2 v ds1 v rg1 v rd1 nc quiescent current temperature compensation 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 c3 c4 z11 z9 c11 c1 c12 z6 z5 table 7. MHV5IC1810Nr2 test circuit compone nt designations and values ? 1805--1880 mhz part description part number manufacturer c1 0.8 pf chip capacitor atc100a0r8bt500xt atc c2 27 pf chip capacitor atc100a270gt500xt atc c3, c4, c5, c6 8.2 pf chip capacitors atc100a8r2ct500xt atc c7, c8, c9 10 nf chip capacitors 08055c103kat avx c10, c11 6.8 f chip capacitors c4532x5r1h685mt tdk c12, c13 3.3 pf chip capacitors atc100a3r3bt500xt atc r1, r2 1k ? , 1/8 w chip resistors crcw1k00fkea vishay
10 rf device data freescale semiconductor MHV5IC1810Nr2 figure 18. MHV5IC1810Nr2 test circui t component layout ? 1805--1880 mhz MHV5IC1810N rev. 0 c10 v d1 v d2 c11 c5 c9 c13 c12 c6 c2 c1 c3 c7 c4 c8 v gs1 r1 v gs2 r2
MHV5IC1810Nr2 11 rf device data freescale semiconductor typical characteristics ? 1805--1880 mhz p out , output power (watts) avg. 100 4 12 v dd =28vdc i dq1 = 105 ma i dq2 =90ma f = 1840 mhz edge modulation 8 6 0 10 1 2 20 60 40 30 0 10 pae t c =85 _ c 25 _ c figure 19. spectral regrowth at 400 and 600 khz versus output power evm, error vector magnitude (% ms) pae, power added efficiency (%) 100 -- 8 5 -- 4 5 p out , output power (watts) avg. -- 5 5 -- 6 0 -- 6 5 -- 7 0 -- 7 5 -- 8 0 0.1 10 t c =85 _ c v dd =28vdc i dq1 = 105 ma i dq2 =90ma f = 1840 mhz edge modulation 25 _ c 85 _ c -- 3 0 _ c sr @ 400 khz sr @ 600 khz figure 20. spectral regrowth at 400 and 600 khz versus output power spectral regrowth @ 400 khz and 600 khz (dbc) -- 3 0 _ c evm -- 5 0 1 -- 3 0 _ c 25 _ c 10 50
12 rf device data freescale semiconductor MHV5IC1810Nr2 z o =50 ? z load f = 1800 mhz z in f = 2000 mhz f = 1800 mhz f = 2000 mhz v dd =28vdc,i dq1 = 120 ma, i dq2 =90ma,p out =5wavg. f mhz z in ? z load ? 1800 43.82 + j6.83 3.49 + j8.58 1820 43.67 + j7.10 3.43 + j8.96 1840 43.50 + j7.34 3.36 + j9.33 1860 43.31 + j7.55 3.31 + j9.68 1880 43.13 + j7.76 3.24 + j10.04 1900 42.96 + j7.96 3.19 + j10.38 1920 42.76 + j8.15 3.14 + j10.72 1940 42.56 + j8.34 3.07 + j11.03 1960 42.36 + j8.50 3.04 + j11.36 1980 42.16 + j8.65 2.99 + j11.65 2000 41.97 + j8.79 2.94 + j11.94 z in = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 21. series equivalent input and load impedance z in z load device under test output matching network
MHV5IC1810Nr2 13 rf device data freescale semiconductor package dimensions
14 rf device data freescale semiconductor MHV5IC1810Nr2
MHV5IC1810Nr2 15 rf device data freescale semiconductor
16 rf device data freescale semiconductor MHV5IC1810Nr2 product documentation refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 1 mar. 2011 ? figs. 3 and 17, test circuit schematic, redrawn t o reflect correct trace lengths and trace length measurements, p. 4, 9 ? updated part numbers in tables 6, 7, component de signations and values, to rohs compliant part numbers, p. 4, 9 ? added product documentation and revision history, p. 16
MHV5IC1810Nr2 17 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MHV5IC1810N rev. 1, 3/2011

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